PART |
Description |
Maker |
ISL97678 ISL97678IRZ |
8-Channel 45V 50mA LED Driver
|
Intersil Corporation
|
LT3909 |
2-String × 50mA, 2MHz Step-Up LED Driver
|
Linear Technology
|
ENA1511A MCH3914-7-TL-H MCH3914-8-TL-H MCH391412 E |
N-Channel JFET, 15V, 16 to 50mA, 29mS, MCPH3 High-Frequency Amplifier, Analog Switch Applications
|
ON Semiconductor Sanyo Semicon Device
|
AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F |
90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory 70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory 120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory x8 Flash EEPROM x8闪存EEPROM x8/x16 Flash EEPROM
|
Atmel, Corp.
|
ISTS400 ISTS300 |
5V; 50mA single channel slotted interrupter switch with transistor sensors 1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH DARLINGTON SENSORS
|
ISOCOM List of Unclassifed Manufacturers
|
HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262, 144-Word x 16-Bit Dynamic Random Access Memory x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor] ITT, Corp.
|
2SA1035 2SA1034 2SA1034/2SA1035 2SA1034T 2SA1035R |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 50MA I(C) | TO-236AB 晶体管|晶体管|进步党| 35V的五(巴西)总裁| 50mA的一(c)|36AB TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 50MA I(C) | TO-236AB 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 2SA1034. 2SA1035 - PNP Transistor
|
Rochester Electronics, LLC Matsshita / Panasonic
|
HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
2SA1038S 2SA1579 2SA1514K |
ER 3C 3#12 PIN PLUG High-voltage Amplifier Transistor (−120V/ −50mA) High-voltage Amplifier Transistor (-120V, -50mA) High-voltage Amplifier Transistor (−120V −50mA) High-voltage Amplifier Transistor (−120V, −50mA)
|
Rohm Co., Ltd. ROHM[Rohm]
|
HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY 60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|